Prof. Andreas Rüdiger, Institut national de la recherche scientifique, 1650, Blvd. Lionel-Boulet, Varennes (QC) J3X 1S2, CANADA.

 The interest in resistive switching, the reversible change of conductivity as a function of an external electrical signal, experienced a renaissance since little more than a decade driven by demands for future nanoelectronic tiles with versatile use for either memory or logic. With two terminals only, the integration of these tiles initially focused on passive crossbar arrays that soon developed into a research field on their own due to challenges of up-scaling the number of interconnects and the related CMOS overhead. Reports of new materials and new mechanisms underlying the observed resistance hysteresis arrived on an almost daily basis so that the related research soon diversified among materials, mechanisms and circuitry in an ever since growing research community.

While the initial structure is generally a metal-insulator-metal (MIM) stack, the sheer number of scenarios that lead to resistive switching requires a subdivision into categories. So the first part of this presentation will be dedicated to different mechanisms of resistive switching, the most common material systems and to the most important circuitry considerations, which immediately leads to a pre-selection about mechanisms and materials for applications in semiconductor industries.

The second part of this presentation will deal with results from our own group related to binary and ternary oxides for highly integrated resistively switching thin films ranging from TiO₂, a valency change material and early contender in resistive switching, to nanoporous SiO₂, a conductive bridge material suitable for printable electronics to ultrathin ferroelectric films of only a few unit cell thickness to act as ferroelectric tunnel junctions. All discussion will be based on the additional value that these concepts offer to existing technologies and to the possibility of scaling regarding size, energy and speed.

Site web du groupe du Prof. Rüdiger

Cette conférence est présentée par le RQMP Versant Nord du Département de physique de l'Université de Montréal et le Département de génie physique de Polytechnique Montréal.