François Schiettekatte
- Professeur titulaire
-
Faculté des arts et des sciences - Département de physique
Complexe des sciences office B-4419
Web : Autre site web
Affiliations
- Directeur adjoint – GCM — Groupe de recherche en physique et technologie des couches minces
- Membre – RQMP — Regroupement québécois sur les matériaux de pointe
Education Programs
- Fundamental and Applied Sciences
- Fundamental and Applied Sciences
- Fundamental and Applied Sciences
- Fundamental and Applied Sciences
- Fundamental and Applied Sciences
- Fundamental and Applied Sciences
- Fundamental and Applied Sciences
- Fundamental and Applied Sciences
- University Preparatory Programs
- Life Sciences Fundamental and Applied Sciences
- Fundamental and Applied Sciences
Courses
- PHY2215 Physique thermique et statistique
- PHY6918 Concepts de radioprotection pour le génie clinique
Areas of Expertise
- Materials science
- Defects and impurities in thin films: doping, implantation
- Atom, molecule, and ion scattering
- Deposition by sputtering
- Kinetics of defect formation and annealing
- Atomic, molecular, and ion beam impact and interactions with surfaces
- Heat capacity of amophous solids and glasses
- Nanoscale materials and structures: fabrication and characterization
Ion implantation is a technique for modifying the surface of materials by injecting precise quantities of atoms at the desired depth. It is widely used in doping semiconductors when manufacturing very large-scale integrated circuits (VLSI). Since it is a highly out-of-balance phenomenon (the incident atoms typically have energies millions of times higher than the atoms in the material), this implantation often generates new structures at the atomic level that can be exploited to improve the performance of high-tech materials, or may create problems to be overcome.
For instance, during the doping process, implantation creates defects in semiconductors by displacing crystal atoms, and this is damaging to integrated circuits. If there are not too many defects, the damage can be corrected by annealing and the dopant activated. If the density of the defects exceeds a certain threshold, however, permanent damage will appear in the materials and may make the devices unusable.
Inversely, ion implantation generates defects that can be used to modify materials. Implantation makes it possible to create defects near the surface that can later diffuse throughout the material and modify the composition of the lower layers by interdiffusion. In this way it is possible to change the emission wavelengths of quantum dots or wells and the properties of the magnetic layers.
Ion beams can also be used for highly sensitive quantitative measurement of the deep distribution of atoms in a material. In our laboratories we use various ion beam analysis techniques, in particular elastic recoil detection (ERD), a technique developed in our laboratories in the 1970s, and Rutherford backscattering spectrometry (RBS), RBS channelling and nuclear resonant reaction analysis (NRRA).
Student supervision Expand all Collapse all
Cycle : Master's
Grade : M. Sc.
Cycle : Master's
Grade : M. Sc.
Research projects Expand all Collapse all
Regroupement québécois sur les matériaux de pointe (RQMP) Projet de recherche au Canada / 2022 - 2029
Relaxation, friction interne et ondes gravitationnelles Projet de recherche au Canada / 2022 - 2028
Plateforme d'iinovation en procédés plasma avec caractérisation in-plasma des matériaux et nanomatériaux Projet de recherche au Canada / 2021 - 2027
Relaxation, friction interne et ondes gravitationnelles Projet de recherche au Canada / 2022 - 2026
Contrôle des contraintes mécaniques résiduelles dans les revêtements optiques: de leurs origine aux applications avancées Projet de recherche au Canada / 2021 - 2024
Regroupement québécois sur les matériaux de pointe ( RQMP ) Projet de recherche au Canada / 2019 - 2024
Electron microscopy analysis of (nano)materials with environmental, biological and industrial importance Projet de recherche au Canada / 2021 - 2023
CALCUL QUEBEC Projet de recherche au Canada / 2015 - 2023
EVOLUTION OF NANOSCALE GLASSES Projet de recherche au Canada / 2014 - 2023
Bourse de stage international - Mané Seck / Regroupement québécois sur les matériaux de pointe ( RQMP ) Projet de recherche au Canada / 2020 - 2021
Bourse de stage international - Megan Cowie / Regroupement québécois sur les matériaux de pointe ( RQMP ) Projet de recherche au Canada / 2020 - 2021
Supplément COVID-19 CRSNG_EVOLUTION OF NANOSCALE GLASSES Projet de recherche au Canada / 2020 - 2021
Regroupement québécois sur les matériaux de pointe (RQMP) Hosted by McGill 2017-2021 Projet de recherche au Canada / 2017 - 2021
Plateforme d'iinovation en procédés plasma avec caractérisation in-plasma des matériaux et nanomatériaux Projet de recherche au Canada / 2016 - 2021
Regroupement québécois sur les matériaux de pointe Projet de recherche au Canada / 2015 - 2021
DEVELOPMENT OF GERMANIUM FIBER BRAGG GRATINGS AND ER-DOPED FIBER AMPLIFIERS FOR OPERATION IN HARSH ENVIRONMENTS Projet de recherche au Canada / 2013 - 2016
REGROUPEMENT QUEBECOIS SUR LES MATERIAUX DE POINTE (RQMP) Projet de recherche au Canada / 2013 - 2016
DETECTEURS TERAHERTZ A BASE D'INGAASP ET SYSTÈME D'IMAGERIE THZ EN CHAMP PROCHE Projet de recherche au Canada / 2012 - 2016
REGROUPEMENT STRATEGIQUE - REGROUPEMENT QUEBECOIS SUR LES MATERIAUX DE POINTE (RQMP) Projet de recherche au Canada / 2009 - 2016
REGROUPEMENT QUEBECOIS SUR LES MATERIAUX DE POINTE - RQMP Projet de recherche au Canada / 2009 - 2016
DETECTEURS TERAHERTZ A BASE D'INGAASP ET SYSTÈME D'IMAGERIE THZ EN CHAMPS PROCHE Projet de recherche au Canada / 2012 - 2015
CANADIAN CHARGED PARTICLE ACCELERATOR CONSORTIUM (CCPAC) Projet de recherche au Canada / 2011 - 2015
DEVELOPING METHODS OF ULTRATHIN FILMS CHARACTERISATION: NANOCALORIMETRY AND ION BEAM ANALYSIS Projet de recherche au Canada / 2001 - 2015
GROUPE DE RECHERCHE EN PHYSIQUE ET TECHNOLOGIE DES COUCHES MINCES (GCM) - INSTALLATION CENTRALE POUR LA FABRICATIONET LA CARACTERISATION DES MATERIAUX ET DISPOSITIFS DE POINTE Projet de recherche au Canada / 2008 - 2014
DEVELOPING METHODS OF ULTRATHIN FILMS CHARACTERISATION: NANOCALORIMETRY AND ION BEAM ANALYSIS Projet de recherche au Canada / 2009 - 2013
ALUMINUM ADHESION OF POLYETHYLENE TEREPHTHALATE Projet de recherche au Canada / 2011 - 2012
Publications Expand all Collapse all
Articles publiés ou acceptés
- L.K. Béland, Y. Anahory, D. Smeets, M. Guihard, P. Brommer, J.-F. Joly, J.-C. Pothier, L.J. Lewis, N. Mousseau, F. Schiettekatte, Replenish and Relax: Explaining Logarithmic Annealing in Ion-Implanted c-Si, Phys. Rev. Lett. 111 (2013) 105502
- P. Turcotte-Tremblay, M. Guihard, S. Gaudet, M. Chicoine, C. Lavoie, P. Desjardins, F. Schiettekatte, Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si, J. Vac. Sci. Technol. B 31 (2013) 051213
- F. Schiettekatte, Tails, Nucl. Instrum. Meth. B, revised version submitted (2013/11)
- A. Fekecs, M. Chicoine, B. Ilahi, F. Schiettekatte, P.G. Charette, R. Ares, Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing, J. Phys. D: Appl. Phys 46 (2013) 165106
- M. Molina-Ruiz, A. F. Lopeandía, M. González-Silveira, Y. Anahory, M. Guihard, G. Garcia, M. T. Clavaguera-Mora, F. Schiettekatte, J. Rodríguez-Viejo, Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry, Appl. Phys. Lett. 102(2013) 143111
- A. Fekecs, M. Bernier, D. Morris, M. Chicoine, F. Schiettekatte, P. Charette, and R. Arès, Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices, Optical Materials Express 1 (2011) 1165
- M. Mayer, W. Eckstein, H. Langhuth, F. Schiettekatte, U. von Toussaint, Computer Simulation of Ion Beam Analysis: Possibilities and Limitations. Nucl. Instrum. Meth. B 269 (2011) 3006
- J.-C. Pothier, F. Schiettekatte, L.J. Lewis, Flowing damage in ion-implanted amorphous silicon, Phys. Rev. B 83 (2011) 235206
- L. Hu, L. de la Rama, M. Efremov, Y. Anahory, F. Schiettekatte, L. H. Allen, Leslie, Synthesis and Characterization of Single-Layer Silver-Decanethiolate Lamellar Crystals, J. Amer. Chem. Soc. 133 (2011) 4367
- Y. Anahory, M. Guihard, D. Smeets, R. Karmouch, F. Schiettekatte, Ph. Vasseur, P. Desjardins, Liang Hu, L.H. Allen, E. Leon-Gutierrez, J. Rodriguez-Viejo, Fabrication, characterization and modeling of single-crystal thin film calorimeter sensors, Thermochim. Acta 510 (2010) 126.
- H. Kallel N. Mousseau, F. Schiettekatte, Evolution of the Potential-Energy Surface of Amorphous Silicon Phys. Rev. Lett. 105 (2010) 045503.
- D. Barba, D. Koshel, F. Martin, G.G. Ross, M. Chicoine, F. Schiettekatte, M. Yedji, J. Demarche, G. Terwagne, Silicon nanocrystal synthesis by implantation of natural Si isotopes, J. Luminescence 130 (2010) 669.
- R. Kumaran, S.E. Webster, S. Penson, W. Li, T. Tiedje, P. Wei, F. Schiettekatte, Epitaxial neodymium-doped sapphire films, a new active medium for waveguide lasers, Optics Lett. 34 (2009) 3358.
- O. Moutanabbir, YJ. Chabal, M. Chicoine, S. Christiansen, R. Krause-Rehberg, F. Schiettekatte, R. Scholz, O. Seitz, S. Senz, F. Süßkraut, U. Gösele, Mechanisms of ion-induced GaN thin layer splitting, Nucl. Instr. Meth. B267 (2009) 1264.
- M. Guihard, P. Turcotte-Tremblay, S. Gaudet, C. Coia, S. Roorda, P. Desjardins, C. Lavoie, F. Schiettekatte, Controlling nickel silicide phase formation by Si implantation damage, Nucl. Instr. Meth. B267 (2009) 1285.
- J.-F. Desjardins, M. Chicoine, F. Schiettekatte, D. Barba, F. Martin, G.G. Ross, Impact of Ni co-implantation on Si nanocrystals formation and luminescence, Nucl. Instr. Meth. B267 (2009) 1317.
- I.B. Radovic, M. Jaksic, F. Schiettekatte, Technique for sensitive carbon depth profiling in thin samples using C-C elastic scattering, 24 (2009) 194.
- F. Schiettekatte, Fast Monte Carlo for Ion Beam Analysis Simulations, Nucl. Instr. Meth. B266 (2008) 1880.
- C. Dion, P. Desjardins, F. Schiettekatte, M. Chicoine, M. D. Robertson, N. Shtinkov, P. J. Poole, X. Wu, S. Raymond, Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation, J. Appl. Phys. 104, (2008) 043527.
- O. Moutanabbir, R. Scholz, S. Senz, U. Gösele, M. Chicoine, F. Schiettekatte, F. Süßkraut, R. Krause-Rehberg, Microstructural evolution in H ion induced splitting of freestanding GaN, Appl. Phys. Lett. 93 (2008) 031916
- P.J. Simpson, A.P. Knights, M. Chicoine, K. Dudeck, O. Moutanabbir, S.Ruffell, F. Schiettekatte, B. Terreault, Thermal evolution of defects produced by implantation of H, D and He in Silicon, App. Surf. Sci. 255 (2008) 63.
- N. Desrosiers, A. Giguère, B. Terreault, M. Chicoine, F. Schiettekatte, Implantation effects of low energy H and D ions in germanium at -120 °C and room temperature. Nucl. Instr. Meth. B266 (2008) 1880
- C. Dion, P. Desjardins, N. Shtinkov, F. Schiettekatte, P. J. Poole, and S. Raymond, Effects of grown-in defects on interdiffusion dynamics in InAs/InP(001) quantum dots subjected to rapid thermal annealing, J. Appl. Phys. 103 (2008) 083526
- C. Dion, P. Desjardins, N. Shtinkov, M. D. Robertson, F. Schiettekatte, P. J. Poole, S. Raymond, Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation, Phys. Rev. B77 (2008)075338
- L. Stafford, W.T. Lim, S.J. Pearton, Ju-Il Song, J.-S. Park, Y.-W. Heo, J.-H. Lee, J.-J. Kim, M. Chicoine, F. Schiettekatte, Deep etch-induced damage during ion-assisted chemical etching of sputtered indium-zinc-oxide films in Ar/CH4/H2 plasmas, Thin Solid Films 516 (2008) 2869
- L. Stafford, W.T. Lim, S.J. Pearton, M. Chicoine, F. Schiettekatte, J.-I. Song, J.-S. Park, Y.W. Heo, J.-H. Lee, J.-J. Kim, I.I. Kravchenko, Influence of the film properties on the plasma etching dynamics of rf-sputtered indium-zinc-oxide layers, J. Vac. Sci. Technol. A25 (2007) 659
- R. Karmouch, Y. Anahory, J.-F. Mercure, D. Bouilly, M. Chicoine, G. Bentoumi, R. Leonelli, Y.Q. Wang, F. Schiettekatte, Damage evolution in low-energy-ion implanted silicon, Phys. Rev. B75 (2007) 075304
- O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, P. J. Simpson, Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon, Phys. Rev. B75 (2007) 075201
- C. Dion, P. Desjardins, M. Chicoine, F. Schiettekatte, P.J. Poole, S. Raymond, Drastic ion-implantation-induced intermixing during annealing of self-assembled InAs/InP(001) quantum dots, Nanotechnology 18 (2007) 015404
- P. Wei, S.C. Gujrathi, M. Guihard, F. Schiettekatte, Cross-section for 14N(α, p0)17O reaction in the energy range 3.2–4.0 MeV, Nucl. Instrum. Meth B249 (2006) 85.
Communications Expand all Collapse all
Comptes-rendus de conférences
(depuis 2000)
- F. Schiettekatte, Simulation of Multiple Scattering Effects on Coincidence, AIP Conf. Proc. 1099 (2009) 314.
- C. Dion, P. Desjardins, F. Schiettekatte, M. Chicoine, P. J. Poole, S. Raymond, Tuning the Electronic Properties of Self-Assembled InAs/InP(001) Quantum Dots, Meet. Abstr. Electrochem. Soc. 602 (2006) 1269.
- O. Moutanabbir, B. Terreault, N. Desrosiers, A. Giguère, G. G. Ross, M. Chicoine, F. Schiettekatte, Hydrogen Cleaving of Silicon at the Sub-100-nm Scale AIP Conf. Proc. 772 (2005) 1491
- M. Chicoine, A. Francois, C. Tavares, S. Chevobbe, F. Schiettekatte, V. Aimez, J. Beauvais, J. Beerens, Effects of damage accumulation on quantum well intermixing by low-energy ion implantation in photonic devices, SPIE 5260 (2004) 423
- R. Taillefer, P.Desjardins, F. Schiettekatte, A Finite Element Model of Ultra-Sensitive Thin Film Calorimeters for the Study of Size-Dependent Thermodynamical Properties of Materials at the Nanoscale, Proceedings of the first Annual Northeast Workshop on Circuits and Systems (IEEE-NEWCAS2003), Montreal, Canada, June 2003, pp. 129-132.
- F. Schiettekatte, V. Aimez, M. Chicoine, S. Chevobbe, J.F. Chabot, J.F. Rajotte. Low energy ion implantation induced intermixing in photonic devices: defects profiling and evolution, Proceedings of the 17th Conference on the Application of the Accelerators in Research and Industry. AIP Conf. Proc. 680 (2003) 609
- M. Zhang, M. Yu. Efremov, F. Schiettekatte, E. A. Olson, and L. H. Allen. "Magic" Nanostructures During The Early Stage of Thin Film Growth 2001 Spring Meeting Proceedings 672 (2001) O5.3, Material Research Society
- S. Roorda, F. Schiettekatte, M. Cai, T. Veres, A. Tchebotareva. MeV ion implantation for modification of electronic, optical, and magnetic materials SPIE 3413 (1998) 165
- F. Schiettekatte, G.G. Ross. ERD spectrum to depth profile conversion program for Windows. Proceeding of the 14th International Conference on the Applicationof Accelerators in Research and Industry. AIP Conf. Proc. 392 (1997) 711
- D. Kéroack, F. Schiettekatte, B. Terreault, G.G. Ross. Laser Desorption and Depth Profiling Study of H and D in Implanted Be. Proceedings of International Conference on Fusion Reactor Materials. (1993) Stresa (Italy).
Additional Information
- 09-09-2015 Les laboratoires insolites de l’UdeM
- 01-01-2015 - Octroi de plus de 26 M$ pour la recherche à l'UdeM
- 02-06-2014 - Ma fenêtre est une centrale électrique!
- 04-09-2013 - Une seconde
- 03-09-2010 - Montréal hôte de l’International Conference on Ion Beam Modification of Materials
- 03-09-2008 - Mesurer la chaleur libérée par des nanocristaux
Media
Regroupement québécois des matériaux de pointe
Browse this profile on: